Ti-doped Ta2O5 (similar to 10; 30 nm) obtained by sputtering was studied with respect to their dielectric and electrical properties. The incorporation of Ti was performed by two original methods - surface doping where Ti layer was deposited on the top of TA(2)O(5) and bulk doping where the layer was embedded inside the TA(2)O(5). The surface doping is worthy for thin-and the bulk doping is more beneficial for thick film stacks, (the current lowers with similar to 1-2 orders of magnitude). In the context of advanced high-k dielectrics (thinner layers) the surface-doped Ta2O5 has better potential. The incorporation ofTi into Ta2O5 causes generation of negative oxide charge. The mechanism of current reduction is considered to be due to Ti-induced compensation of existing oxygen vacancies. (C) 2008 Elsevier B.V. All rights reserved.