B atomic-layer doping in Si/Si(1-x)Ge(x)(100) (x=0.3, 1) heterostructure utilizing BCl(3) reaction on Si(1-x)Ge(x)(100) and subsequent Si epitaxial growth by SiH(4) reaction was investigated by ultraclean low-pressure chemical vapor deposition. On 1/3-1/2 atomic layer (2.3-3.5x10(14) cm(-2)) B formed Si(1-x)Ge(x) (100) achieved self-limitedly with high Cl coverage, the adsorbed Cl atoms are effectively removed by SiH(4) exposure at 300 degrees C after BCl(3) exposure. Furthermore, it was found that the SiH(4) reaction at 300 degrees C on Ge(100) is enhanced by B adsorption. (c) 2008 Elsevier B.V. All rights reserved.