The influence of chip layout (Si coverage and geometry) on the pattern dependency of selective epitaxy of SiGe layers has been investigated. The variation of Ge content and the growth rate have been investigated from a chip-to-chip (local effect) or wafer-to-wafer. The results are described by transport and diffusion of the reactant molecules over the chips during epitaxy. Our investigations are focused on the origin of pattern dependency of the deposition and also propose methods to control this growth behavior. (c) 2008 Elsevier B.V. All rights reserved.