Semiconductor nanostructures are interesting objects for many microelectronic and optoelectronic applications. Nevertheless, to use them, it is necessary to control their size, their density and their spatial distribution. In the last decade, many researches have been done to control these parameters. One of them is the elaboration of a functional substrate inducing a lateral self-organization of nanostructures. The organization driving force here is the strain field induced on the surface by a buried dislocations network in twist boundaries. In the present work, the needed strain and stress fields, generated by a square network of screw dislocations located between a finite layer of Si bonded onto a semi infinite Si substrate, are calculated using anisotropic The results obtained are compared to those obtained in the isotropic elasticity. elasticity. (c) 2008 Elsevier B.V. All rights reserved.