Semiconductor nanostructures are interesting objects for many microelectronic and optoelectronic applications. Nevertheless, to use them, it is necessary to control their size, their density and their spatial distribution. In the last decade, many research carried out in order to control all these parameters. One of these researches is the elaboration of a functional substrate inducing a lateral self-organization of nanostructures. The organization driving force is the strain field induced on the surface by a buried dislocations network. Because of the lack of analytical solutions corresponding to the elasticity problems involved, at present the only explicit solutions, for the strain field, are derived from isotropic elasticity theory. In the present work, the elastic fields as displacements and strain variations, generated by a hexagonal network of edge dislocations located between a finite layer of Si(111) bonded onto a semi infinite Si(111) substrate, are calculate and illustrate using anisotropic elasticity. Analogy with the isotropic case was also discussed. (c) 2008 Elsevier B.V. All rights reserved.