Thin Solid Films, Vol.517, No.1, 334-336, 2008
Effect of strain, substrate surface and growth rate on B-doping in selectively grown SiGe layers
In this work, the role of strain and growth rate on boron incorporation in selective epitaxial growth (SEG) of B-doped Si(1-x)Ge(x) (x=0.15-0.25) layers in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. A focus has been made on the strain distribution and B incorporation in SEG of SiGe layers. (c) 2008 Elsevier B.V. All rights reserved.