High performance high Ge fraction intrinsic Si(1-x)Ge(x)-heterochannel MOSFETs with embedded Si(1-x)Ge(x) source/drain electrodes fabricated by the use of a low thermal budget process below 700 degrees C are demonstrated for the first time. The carrier mobility is very high in spite of high concentration impurity doping to the substrates for the threshold voltage control. It is suggested that this superior device characteristic is caused by suppression of impurity diffusion into the Si(1-x)Ge(x)-heterochannel, the high Ge fraction in the Si(1-x)Ge(x)-heterochannel and compressive stress applied to the Si(1-x)Ge(x)-heterochannel due to the embedded Si(1-x)Ge(x) source/drain. (c) 2008 Elsevier B.V. All rights reserved.