Growth of ferromagnetic silicide Fe(3)Si on SiO(2), was investigated by using the molecular beam deposition technique. Measurements combined with X-ray diffraction and reflective high-energy electron diffraction clearly indicated that poly-crystal Fe(3)Si layers were formed on Si(111) substrates covered with thick (>2.7 nm) SiO(2) films. On the other hand, it is suggested that Fe(3)Si layers were epitaxially grown on Si(111) substrates covered with ultra-thin (1.3 nm) SiO(2) films. Transmission electron microscopy and electron diffraction measurements confirmed that single crystalline Fe(3)Si layers with (111) orientation were formed on Si(111) substrates with ultra-thin (1.3 nm) SiO(2) films. These results were considered to originate from heteroepitaxy on crystalline ultra-thin SiO(2) layer or lateral epitaxial growth over SiO(2) through pinholes. (C) 2008 Elsevier B.V. All rights reserved.