In this paper we show results from resonant photoemission experiments where energy dispersive curves (EDC) were collected at various photon energies around the Si2p absorption edge. From the complete collection we have extracted the spectrum measured at the photon energy of 125 eV and studied the Auger feature included in the EDC. From the comparison of the Auger line of the bulk SiO(2) with the expected transitions we demonstrate the occurrence of inter-atomic transitions in the bulk oxide. Comparing the Auger line from the bulk oxide with that from a native oxide we may observe the occurrence of inter-atomic transitions localized at the interface. We propose an interpretation of this result by considering the geometry at the interface. (C) 2008 Elsevier B.V. All rights reserved.