The structural, optical, and electronic properties of thin films ON family of wide band gap (E-g>2.3 eV)p-type semiconductors Cu(3)TaQ(4) (Q = S or Se) are presented. Thin films prepared by pulsed laser deposition of ceramic Cu(3)TaQ(4) targets and ex-situ annealing of the as-deposited films in chalcogenide vapor exhibit mixed polycrystalline/[100]-directed growth on amorphous SiO2 substrates and strong (100) preferential orientation on single-crystal yttria-stabilized zirconia substrates. Cu3TaS4 (E-g=2.70 eV)thin films are transparent over the entire visible spectrum while Cu3TaSe4 (E-g=2.35 eV) thin films show some absorption in the blue. Thin film solid solutions of Cu3TaSe4-xSx and Cu3TaSe4-xTex can be prepared by annealing Cu3TaSe4 films in a mixed chalcogenide vapor. Powders and thin films of Cu3TaS4 exhibit visible photoluminescence when illuminated by UV light. (C) 2008 Elsevier B.V. All rights reserved.