Tin sulfide (SnS) thin films have been prepared by spray pyrolysis (SP) technique using tin chloride and N, N-dimethylthiourea as precursor compounds. Thin films prepared at different temperatures have been characterized using several techniques. X-ray diffraction studies have shown that substrate temperature (T,) affects the crystalline structure of the deposited material as well as the optoelectronic properties. The calculated optical band gap (E(g)) value for films deposited at T(s)=320-396 degrees C was 1.70 eV (SnS). Additional phases of SnS(2) at 455 degrees C and SnO(2) at 488 degrees C were formed. The measured electrical resistivity value for SnS films was similar to 1 x 10(4) Omega-cm. (C) 2008 Elsevier B.V. All rights reserved.