Thin-film solar cells based on Cu2ZnSnS4 (CZTS) absorbers were fabricated successfully by solid-state reaction in H2S atmosphere of electrodeposited Cu-Zn-Sn precursors. These ternary alloys were deposited in one step from a cyanide-free alkaline electrolyte containing Cu(II), Zn(II) and Sn(IV) metal salts on Mo-coated glass substrates. The solar cell was completed by a chemical bath-deposited US buffer layer and a sputtered i-ZnO/ZnO:Al bilayer. The best solar cell performance was obtained with Cu-poor samples. A total area (0.5 cm(2)) efficiency of 3.4% is achieved (V-oc=563 mV, j(sc)=14.8 mA/cm(2), FF=41%) with a maximum external quantum efficiency (EQE) of 80%. The estimated band-gap energy from the external quantum efficiency (EQE) measurements is about 1.54 eV. Electron backscatter-diffraction maps of cross-section samples revealed CZTS grain sizes of up to 10 mu m. Elemental distribution maps of the CZTS absorber show Zn-rich precipitates, probably ZnS, and a Zn-poor region, presumably Cu2SnS3, close to the interface Mo/CZTS. (C) 2008 Elsevier B.V. All rights reserved.