High mobility p-type ZnO:AlN thin films have been efficiently realized by utilizing pre-activated nitrogen (N) plasma sources with an inductively coupled dual target co-sputtering system. High density of N-plasma-radicals was generated with an additional RF power applied through a ring-shaped quartz-tube located inside the chamber during co-sputtering process. The AlN codoped ZnO film shows excellent p-type behavior with a high mobility and a hole concentration of 154 cm(2.)V(-1)s(-1) and about 3 x 10(18.) cm(-3) at 600 degrees C, respectively. Electrical properties of p-n homo-junction devices based on p-type ZnO film are also discussed. (C) 2009 Elsevier B.V. All rights reserved.