Solution-based indium gallium zinc oxide (IGZO)/single-walled carbon nanotubes; (SWNTs) blend have been used to fabricate the channel of thin film transistors (TFTs). The electrical characteristics of the fabricated devices were examined. We found a low leakage current and a higher on/off currents ratio for TFT with SWNTs compared to solution-based TFTs made without SWNTs. The saturation field effect mobility (mu(sat)) of about 0.22 cm(2)/Vs, the current on/off ratio is similar to 10(5), the subthreshod swing is similar to 2.58 V/decade and the threshold voltage (V(th)) is less than -2.3 V. We demonstrated that the solution-based blend active layer provides the possibility of producing higher performance TFTs; for low-cost large area electronic and flexible devices. (C) 2009 Elsevier B.V. All rights reserved.