A barrier structure consisting of silicon oxide and silicon nitride films was deposited via plasma-enhanced chemical vapor deposition (PECVD) for the encapsulation of polymer solar cells (PSCs). The total concentration of the solution and the ratio of P3HT and PCBM on the performance of polymer solar cells were studied by UV-Vis absorption spectroscopy, atomic force microscopy and photocurrent measurement. Base on these measurements, there is a compromise between light absorption and phase separation with increasing blend concentration. The PSCs were annealed at 80, 100, 120 and 140 degrees C for 10-60 min to investigate the thermal effects and to estimate the best deposition temperature of the barrier layers. Nevertheless, the devices with the encapsulation of barrier layers had relatively low power conversion efficiencies (PCE) of 0.98% comparing to the devices heated in the PECVD system (1.57%) at the same condition of 80 degrees C for 45 min due to the plasma damage during the film deposition process. After inserting a 5-nm TiO(x) layer between Al/barrier structure and active layer against the plasma damage, the annealed devices presented an average PCE of 2.26% and demonstrated over 50% of their initial value after constant exposure to ambient atmosphere and sunlight for 1500 h. (C) 2009 Elsevier B.V. All rights reserved.