Large-scale, well-aligned, and oriented semiconductor ZnSe nanobelt arrays have been achieved via the thermal treatment of belt-like precursor (ZnSe center dot ethylenediamine), which has been synthesized by a simple template-free solvothermal route. ZnSe nanobelts grow perpendicularly on zinc substrate, with thickness of about 50 nm, widths of several hundreds of nanometers, and lengths of up to several micrometers. The as-obtained products have been characterized by scanning electron microscopy, X-ray diffraction, energy-dispersive X-ray, and photoluminescence spectrometer. The cooperative action of the mixed solvents is responsible for the formation of the morphology of the resulting ZnSe nanobelt arrays. Room-temperature photoluminescence measurement indicates that the as-obtained ZnSe nanobelt arrays have a strong emission peak centered at 578 nm and two weak emission peaks centered at 420 and 433 nm. The strong emission from the unique well-aligned ZnSe nanostructures reveals their potential as building blocks for optoelectronics devices. (C) 2009 Elsevier B.V. All rights reserved.