화학공학소재연구정보센터
Thin Solid Films, Vol.517, No.17, 4879-4882, 2009
Effects of different nitrogen/methane ratios on the residual stress of a-C:N thin films prepared by plasma enhanced chemical vapor deposition
The effects of different nitrogen/methane (N(2)/CH(4)) ratios on the residual stress (sigma(r)) of nitrogenated amorphous carbon (a-C:N) thin films prepared by plasma enhanced chemical vapor deposition are investigated. The microstructure, optical and mechanical properties of a-C:N films are evaluated. Meanwhile, the sigma(r) of a-C:N films is analyzed using the laser curvature method, and the sigma(r) connected to the above material properties of a-C:N films is discussed in detail. As the N(2)/CH(4) ratio increases from 0 to 1.4, the sp(2) domain size of a-C:N films increases, while the optical band gap, Young's modulus and hardness of a-C:N films decrease. Alternatively, the sigma(r) of a-C:N films decreases with increasing the N(2)/CH(4) ratio, and the maximum stress reduction of a-C:N films is achieved with N(2)/CH(4) ratio of 1.4 in this article. (C) 2009 Elsevier B.V. All rights reserved.