Zirconium tin titanium oxide doped 1 wt.% ZnO thin films on n-type Si substrate were deposited by rf magnetron sputtering at a fixed rf power of 300 W, a substrate temperature of 450 degrees C, a deposition pressure of 5 mTorr and an Ar/O-2 ratio of 100/0 with various annealing temperatures and annealing times. Electrical properties and microstructures of I wt.% ZnO-doped (Zr0.8Sn0.2)TiO4 thin films prepared by rf magnetron sputtering on n-type Si(100) substrates at different annealing temperatures (500 degrees C-700 degrees C) and annealing times (2 h-6 h) have been investigated. The structural and morphological characteristics analyzed by X-ray diffraction (XRD) and atomic force microscope (AFM) were sensitive to the treatment conditions such as annealing temperature and annealing time. At an annealing temperature of 600 degrees C and an annealing time of 6 h, the ZnO-doped (Zr0.8Sn0.2)TiO4 thin films possess a dielectric constant of 46 (at f = 10 MHz), a dissipation factor of 0.059 (at f = 10 MHz), and a low leakage current density of 3.8 x 10(-9) A/cm(2) at an electrical field of 1 kV/cm. (c) 2009 Elsevier B.V. All rights reserved.