Tungsten nitride carbide (WN(x)C(y)) thin films were deposited by chemical vapor deposition using me dimethylhydrazido (2(-)) tungsten complex (CH(3)CN)Cl(4)W(NNMe(2)) (1) in benzonitrile with H(2) as a co-reactant in the temperature range 300 to 700 degrees C. Films were characterized using X-ray diffraction (XRD), Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy and four-point probe to determine film crystallinity, composition. atomic bonding, and electrical resistivity, respectively. The lowest temperature at which growth was observed from 1 was 300 degrees C. For deposition between 300 and 650 degrees C, AES measurements indicated the presence of W, C, N, and 0 in the deposited film. The films deposited below 550 degrees C were amorphous, while those deposited at and above 550 degrees C were nano-crystalline (average grain size <70 angstrom). The films exhibited their lowest resistivity of 840 mu Omega-cm for deposition at 300 degrees C. WN(x)C(y) films were tested for diffusion barrier quality by sputter coating the film with Cu, annealing the Cu/WN(x)C(y)/Si stack in vacuum, and performing AES depth profile and XRD measurement to detect evidence of copper diffusion. Films deposited at 350 and 400 degrees C (50 and 60 nm thickness, respectively) were able to prevent bulk Cu transport after vacuum annealing at 500 degrees C for 30 min. (C) 2009 Elsevier B.V. All rights reserved.