The present work investigates the role of back gate on the front channel operation of p-channel double gate polycrystalline silicon thin film transistors as a function of temperature. The investigation is performed on TFTs fabricated in films crystallized by a novel variation of SLS process. The results suggest that the presence of back gate can adjust significantly the front gate parameters and also control their temperature dependence allowing the desirable electrical behaviour of double gate TFTs in wide temperature range. (C) 2009 Elsevier B.V. All rights reserved.