The use of Si(011)/Si(001) direct silicon bonding (DSB) substrates is a key for future complementary metal-oxide-semiconductor device technology. In conventional bonding process, it is necessary to remove interfacial SiO(2) to achieve direct atomic bonding. In this study, using X-ray microdiffraction and transmission electron microscopy, we investigate the structural changes caused by oxide out-diffusion annealing (ODA). It is revealed that crystallinity of the bonded Si(011) layer is degraded after low temperature ODA and gradually recovered with an increase in the ODA temperature and time, which is well correlated with the interfacial SiO(2)/Si morphology. Characteristic domain textures depending on the ODA temperature are also detected. (C) 2009 Elsevier B.V. All rights reserved.