Giant growth (similar to 400 mu m length) of single crystalline Ge on insulator (GOI) with (100), (110), and (111) orientations is demonstrated by lateral liquid-phase epitaxy (L-LPE) using Si(100), (110), and (111) substrates, respectively, as the seeds. The micro-probe Raman measurements and transmission electron microscopy observations showed that the growth regions were of very high crystal quality and were defect free. In addition, lateral diffusion of Si atoms was observed only in the regions near the seeding edges (similar to 100 mu m). Based on these findings, the trigger for the giant growth of the high-quality GOI was discussed considering the solidification temperature gradient due to Si-Ge mixing and the thermal gradient due to the latent heat at the growth front. (C) 2009 Elsevier B.V. All rights reserved.