In this work we fabricated, by rf magnetron sputtering from a ZnN target, zinc nitride thin films and examined their properties in order to be used as channel layer in thin film transistors. The films were deposited at 100 W rf power and the At pressure was 5 mTorr. The zinc nitride thin films were n-type, and depending on the thickness they exhibited low resistivity (10-10(-2) Ohm*cm), high carrier concentration (10(18)-10(20) cm(-3)) and very low transmittance values due to the excess zinc in their structure. After annealing at 300 degrees C, in flowing nitrogen, the films became more conductive, but annealing at higher temperatures deteriorated the electrical properties and became transparent. Transparent thin film transistor having zinc nitride as channel layer exhibited promising transistor characteristics after nitrogen annealing. Improvements in output transistor characteristics due to both material (zinc nitride) and transistor optimization are addressed. (C) 2009 Elsevier B.V. All rights reserved.