Inverse spinel zinc stannate (Zn2SnO4, ZTO) films were deposited onto fused quartz glass substrates heated at 800 degrees C by rf magnetron sputtering using a ceramic ZTO target (Zn:Sn = 2:1). H-2 flow ratios [H-2/(Ar + H-2)] were controlled from 0 to 30% during the depositions. ZTO films deposited at 800 degrees C possessed a polycrystalline inverse spinel structure. The lowest resistivity of 1.1 X 10(-2) Omega cm was obtained for a ZTO film deposited at 20% H-2 flow ratio. The transmittance of the ZTO film was approximately 80% in the visible region. (C) 2009 Elsevier B.V. All rights reserved.