We report oil novel pn Ge photodetectors fabricated oil glass The fabrication consists of wafer bonding and layer splitting. followed by a low-temperature epitaxial growth of Ge The photodiodes are characterized in terms of dark current and responsivity, and their performance compared with devices realized on either Ge or Si The minimum current density is 50 mu A/cm(2) at 1 V reverse bias. the responsivity is 0.2 A/W in the photovoltaic mode, with a maximum of 0 28 A/W at 1.55 mu m at a reverse voltage of 5 V (C) 2009 Elsevier B V All rights reserved