We demonstrate that growth of non-polar ZnO in a-plane and m-plane can be achieved through substrate engineering of LaAlO3 with (001) and (112) surface X-ray diffraction, reflection high energy electron diffraction and cross-sectional transmission electron microscopy with selected area diffraction reveal that a-plane ZnO on LaAlO3 (001) consists of two types of domains perpendicular to each other with in-plane orientation relationships of [000](ZnO)//[1 (1) over bar0](LAO) and [1 (1) over tilde 00](ZnO)//[1 (1) over bar0](LAO) Single domain epitaxy of m-plane ZnO on LaAlO3 (112) can be obtained with in-plane orientation relationships of (10 (1) over bar0)(ZnO)//(112)(LAO), [0001](ZnO)//[(1) over bar 10](LAO) and [1 (2) over bar 10](ZnO)//[(1) over bar(1) over bar1](LAO). (C) 2009 Elsevier B.V All rights reserved