Tin-doped indium oxide (ITO) films were deposited on polyethylene terephthalate substrates by RF superimposed DC magnetron sputtering using an ITO target composed of In(2)O(3) (90 wt.%):SnO(2) (10 wt.%). The total sputtering power was maintained at 70 W and the power ratio of RF/(RF + DC) was varied from 0 to 100% in steps of 25%. The discharge voltage and deposition rate decreased with increasing RF/(RF + DC) power ratio. The ITO film deposited at a 50% RF portion of the total power showed the lowest resistivity (3.18 x 10(-4)Omega cm), high transmittance (87.5%) and relatively good mechanical durability, which was evaluated using bending and scratch tests. (C) 2009 Elsevier B.V. All rights reserved.