Titanium oxide thin films were deposited by radiofrequency reactive sputtering in Ar-O(2) atmosphere on silicon (100) wafers and titanium alloy plates (Ti-6Al-4V). Thin films structural characterization was carried out by grazing incidence X-ray diffraction, atomic force microscopy, scanning and transmission electron microscopies. Chemical composition was checked by X-ray wavelength dispersive spectroscopy. Mechanical assessment was achieved by nano-indentation and nano-scratch measurements. The films deposited on silicon substrates are over-stoechiometric in oxygen, with an oxygen to titanium ratio of about 2.2. The growth of anatase and rutile phases was promoted by ranging the total and oxygen partial pressures between 0.17-1.47 Pa and 35-85%. The growth rate of films, determined by grazing incidence X-ray reflectivity, was ranging from 35 to 55 nm/h. The rutile single-phased films possess a hardness of about 2.5 times higher and a lower friction coefficient than the anatase films. The films which contain anatase possess a high surface root-mean-square roughness and a reduced elastic modulus of around 120 GPa close to reduced elastic moduli of hydroxyapatite bioceramic and titanium alloy. So the anatase film could be the best candidate as a titanium oxide intermediate layer between hydroxyapatite and titanium alloy in the field of biomedical implants. (C) 2009 Elsevier B.V. All rights reserved.