Lithium (Li) and nitrogen (N) dual-doped ZnO films with wurtzite structure were prepared by radio-frequency magnetron sputtering ZnO target with Li(3)N in growth ambient of pure Ar and the mixture of Ar and O(2), respectively, and then post annealing techniques. The film showed week p-type conductivity as the ambient was pure Ar, but stable p-type conductivity with a hole concentration of 3.46 x 10(17) cm(-3), Hall mobility of 5.27 cm(2)/Vs and resistivity of 3.43 Omega cm when the ambient is the mixture of Ar and O(2) with the molar ratio of 60:1. The stable p-type conductivity is due to substitution of Li for Zn (Li(Zn)) and formation of complex of interstitial Li (Li(i)) and substitutional N at O site, the former forms a Li(Zn) acceptor, and the latter depresses compensation of Li(i) donor for Li(Zn) acceptor. The level of the Li(Zn) acceptor is estimated to be 131.6 meV by using temperature-dependent photoluminescence spectrum measurement and Haynes rule. Mechanism about the effect of the ambient on the conductivity is discussed in the present work. (C) 2009 Elsevier B.V. All rights reserved.