Low frequency noise in a-Si(x)Ge(y):H thermo-sensing films, on glass and in micro-bolometers of planar and sandwich structures based on the same material has been studied at different temperatures. The noise spectra had the form of the 1/f-like noise with the frequency exponent within the range of 0.8 to 1.6 depending on the sample and temperature. In the temperature range from T = 340 to 400 K the amplitude of the noise and current (at constant voltage) increased. These dependences can be described as a thermal activated process with energies of E(a)(S/I) = 0.63 eV and E(a)(film) = 0.34 eV for relative spectral noise density of the current fluctuations and DC current, respectively. (C) 2009 Elsevier B.V. All rights reserved.