Thin HfO2 films were grown as high-k dielectrics for Metal-Insulator-Metal applications by Atomic Vapor Deposition on 8 inch TiN/Si substrates using pure tetrakis(ethylmethylamido)hafnium precursor. Influence of deposition temperature (320-400 degrees C) and process pressure (2-10 mbar) on the structural and electrical properties of HfO2 was investigated. X-ray diffraction analysis showed that HfO2 layers, grown at 320 degrees C were amorphous, while at 400 degrees C the films crystallized in cubic phase. Electrical properties, such as capacitance density, capacitance-voltage linearity, dielectric constant, leakage current density and breakdown voltage are also affected by the deposition temperature. Finally, TiN/HfO2/TiN stacks, integrated in the Back-End-of-Line process, possess 3 times higher capacitance density compared to standard TiN/Si3N4/TiN capacitors. Good step coverage (>90%) is achieved on structured wafers with aspect ratio of 2 when HfO2 layers are deposited at 320 degrees C and 4 mbar. (C) 2010 Elsevier B.V. All rights reserved.