The study focuses on the deposition of films from pure CF4 using low pressure microwave plasmas (MW) on polystyrene substrate with a subsequent examination of the resulting surfaces. It is generally accepted. that the F/C-ratio of the precursor molecule plays an important role for the outcome of a low pressure plasma process, or the balance between fluorocarbon deposition and material etching. Surprisingly, thin film formation could be observed using MW gas discharges in CF4, a typical etching gas. Coatings with a thickness of at least 10 nm are formed. The films are polytetrafluoroethylene (PTFE)-like, characterized by an F/C-ratio of 1.8, and a hydrophobic surface with a water contact angle of 110 degrees. (C) 2010 Elsevier B.V. All rights reserved.