Using all standard scattering mechanisms the hole mobility in a metal oxide semiconductor field effect transistor SiGe conduction channel at 17K and room temperature was calculated. The mobility measurements were performed at different bath temperatures in the range of 4-300 K. The 4 K peak mobility at a sheet carrier concentration, n(h), of 2.1 x 10(11) cm(-2) is 5100 cm(2) V-1 s(-1) while the 300 K mobility has a peak value of 350 cm(2) V-1 s(-1). By comparing between theory and measurements it is shown that the interface impurities and surface roughness more strongly limit the mobility than alloy scattering does. (C) 2010 Elsevier B.V. All rights reserved.