Thin Solid Films, Vol.518, No.20, 5656-5658, 2010
Influence of chalcogenide glasses electro physical parameters on threshold voltage for phase-change memory
The simple equations have been derived for main setting parameters of phase-change memory (PCM) devices. The calculations of threshold voltage and delay time are carried out based on emission model for an initial stage of electric breakdown in amorphous semiconductors. The temperature dependences of threshold voltage agree with the experimental data for GST material. (C) 2009 Elsevier B.V. All rights reserved.