The etching characteristics of ITO in a BCl(3)/Ar plasma, including the etch rate and selectivity of ITO, were investigated. The maximum etch rate of 62.8 nm/min for the ITO thin films was obtained at a BCl(3)/Ar gas mixing ratio of 25%/75%. Ion bombardment by physical sputtering was required to obtain such high etch rates, due to the relatively low volatility of the by-products formed during the etching. The chemical reactions on the etched surfaces were investigated using X-ray Photoelectron Spectroscopy (XPS) and the preferential losses on the etched surfaces were investigated using Atomic Force Microscopy (AFM). (C) 2010 Elsevier B.V. All rights reserved.