We investigated that high-energy electron beam irradiation (HEEBI) performed in air at room temperature affected remarkably the properties of Al-doped ZnO (AZO) films grown on SiO(2) substrates by radio frequency magnetron sputtering techniques. Hall and photoluminescence measurements revealed that the n-type conductivity was preserved in HEEBI treated films with low dose up to 10(15) electrons/cm(2) and converted to p-type conductivity with further increase in the amount of dose. X-ray photoelectron spectroscopy confirmed the conversion of conductivity by showing that in-diffusion of O(2) from the ambient as well as out-diffusion of Zn from the films took place as a result of HEEBI treatment at high dose of 10(16) electrons/cm(2). X-ray diffraction analysis indicated that all as-grown films were found to have compressive stress, which was enhanced by HEEBI treatment with the increase of doses. It was also found that worse crystallinity with a smaller grain size was observed in HEEBI treated films with a higher dose, which was correlated with rougher surface morphologies of films observed by an atomic force microscope. (C) 2010 Elsevier B.V. All rights reserved.