The deep trap properties of high-dielectric-constant (k) ZrO2 thin films were examined by deep level transient spectroscopy (DLTS). The hole traps of a ZrO2 dielectric deposited by sputtering were investigated in a MOS structure over the temperature range, 375 K-525 K. The potential depth, cross section and concentration of hole traps were estimated to be similar to 2.5 eV, similar to 1.8 x 10(-16) cm(2) and similar to 1.0 x 10(16) cm(-3), respectively. DLTS of ZrO2 dielectrics can be used to examine the threshold voltage shift (AV,h) during the operation of SONOS-type flash memory devices, which employ high-k materials. (C) 2010 Elsevier B.V. All rights reserved.