화학공학소재연구정보센터
Thin Solid Films, Vol.519, No.2, 666-673, 2010
Atomic layer deposition and characterization of zirconium oxide-erbium oxide nanolaminates
ZrO2 and Er2O3 thin films and nanolaminates were grown by atomic layer deposition from tris(2,2 6 6-tetramethyl-3 5-heptanedionato)erbium bis(methylcyclopentadienyl)methoxymethylzirconium and ozone as precursors at 350 C. Nanolaminates consisted of 3-8 nm thick ZrO2 and Er2O3 layers alternately deposited on planar substrates and on three-dimensional substrates with aspect ratio 1 20 The erbium content was 5-15 at.% ZrO2-Er2O3 films crystallized already in as-deposited states Upon annealing at 650 C the films were stabilized in the form of cubic or tetragonal ZrO2 polymorph and cubic Er2O3 Dielectric properties of the nanolaminates were comparable to those of the constituent oxides (C) 2010 Elsevier B V All rights reserved