Bi3 25Eu0 75Ti3O12 (BET) thin films were deposited on Pt/Ti/SiO2/Si(111) substrates by a metal-organic decomposition method The effects of annealing temperatures 600-800 degrees C on microstructure ferroelectric dielectric and piezoelectric properties of BET thin films were studied in detail The spontaneous polarization (87 4x10(-6) C/cm(2) under 300 kV/cm) remnant polarization (65 7 x 10(-6) C/cm(2) under 300 kV/cm) the dielectric constant (992 9 at 100 kHz) and the effective plezoelectric coefficient d(33) (67 3 pmN under 260 kV/cm) of BET thin film annealed at 700 C are better than those of the others The mechanisms concerning the dependence of the enhancement d(33) are discussed according to the phenomenological equation and the improved piezoelectric performance could make the BET thin film a promising candidate for piezoelectric thin film devices (C) 2010 Elsevier B V All rights reserved