AlZnO thin films with various Al/Zn composition ratios were deposited by atomic layer deposition (ALD) at 200 C The effect of the composition of the AlZnO films on their electrical and optical characteristics was investigated The AlZnO films with an Al content of up to 10 at % showed high conductivity while further increasing in the Al content resulted in the abrupt formation of an insulating oxide film The lowest electrical resistivity of the ALD deposited AlZnO film was 65 x 10(-4) [Omega cm] at 5 at.% Al The AlZnO films with up to 5 at % Al exhibited crystalline phases and a near-band-edge emission With increasing Al content the optical band edge showed a blue shift and a sudden shift associated with an insulating bandgap was observed in the AlZnO films containing 20 at % Al (c) 2010 Elsevier B V All rights reserved