Black SiC formation by plasma etching with SF(6)/O(2) chemistry is reported. Black SiC was produced by depositing Si overlayer on SiC and then etching the Si/SiC stack sequentially, thus replicating the black Si morphology to SiC. Black SiC is obtained with almost zero reflectance over the wavelengths from 300 nm to 1050 nm. Thicker Si film was advantageous, and it was important to optimize the etch condition considering both the black Si morphology and the flattening effect of SiC. (C) 2011 Elsevier B.V. All rights reserved.