ZnO films have been grown on (100) oriented MgO substrates by pulsed-electron beam deposition in the room temperature to 500 C range. Highly (00.2) textured films are obtained for a growth temperature higher than 200 degrees C, and epitaxial films are formed at 500 degrees C with the following epitaxial relationships: (1-1.0)(ZnO)//(110)(MgO) and (11.0)(ZnO)//(110)(MgO), despite the difference in symmetry between film and substrate. The low temperature resistivity curves evidenced a metal-semiconductor transition for the ZnO films grown in the 300 to 500 C range which has been interpreted in the frame of the model of conductivity in disordered oxides. (C) 2011 Elsevier B.V. All rights reserved.