The detailed growth of FeSb2 films formed on quartz (0001) substrates by magnetron sputtering is reported. FeSb2 films with different orientations and compositions can be produced by adjusting the Ar working gas pressure and the substrate temperature. By employing FeSb2 thin layers produced at different substrate temperatures as templates. < 101 >-, < 120 >- and < 002 >-textured FeSb2 films were produced under identical growth conditions. The thermoelectric properties of film samples grown at different temperatures were measured and the effects of Sb and FeSb impurities were investigated. (C) 2011 Elsevier B.V. All rights reserved.