Long-term stable p-type ZnO films were grown by atomic layer deposition on semi-insulating GaAs substrates and followed by rapid thermal annealing (RTA) in oxygen ambient. Significant decrease in the electron concentration and increase in the hole concentration, together with the intensity enhancement of acceptor-related A degrees X spectral peak and the shift of bound exciton peak from D degrees X to A degrees X in the low-temperature photoluminescence spectra, were observed as the RTA temperature increased. Conversion of conductivity from intrinsic n-type to extrinsic p-type ZnO occurred at the RTA temperature of 600 degrees C. The p-type ZnO film with a hole concentration as high as 3.44 x 10(20) cm(-3) and long-term stability up to 180 days was obtained as the RTA treatment was carried out at 700 degrees C. The results were attributed to the diffusion of arsenic atoms from GaAs into ZnO as well as the activation of As-related acceptors by the post-RTA treatment. (C) 2011 Elsevier B.V. All rights reserved.