Orientation selective epitaxy (OSE) of CeO2(100) and CeO2(110) layers on Si(100) substrates is studied using reactive magnetron sputtering. The former grows in an area simultaneously irradiated by electron beams during the growth process, whereas the latter grows in the area without electron irradiation. In order to control the electron beam irradiation area, we apply an absorbed electron imaging system. Analyses are made on the sample current profile along Si substrate surfaces and the current components of positive ions and secondary electrons. The spatially controlled OSE growth of the (100) and (110) oriented epitaxial regions is attained and crystallographic orientation distribution within the sample surface was analyzed. (C) 2010 Elsevier B.V. All rights reserved.