CuInGa precursor thin films were deposited using a CuGa (75-25 at.%) and an In 3 '' diameter target material simultaneously by RF magnetron sputtering. The precursor films were deposited on Si and glass substrates at -80 degrees C and room temperature, and characterized by Rutherford backscattering spectroscopy, Auger electron spectroscopy, scanning electron microscopy, atomic force microscopy and X-ray diffraction. The effects of gun power density and substrate temperatures on resulting precursor film properties were investigated. Precursor films deposited at -80 degrees C have a smooth morphology with a 75% reduction in all roughness values and are more dense and homogeneous in structure compared to precursors deposited at room temperature. Therefore these precursors will result in better selenization process reproducibility. (C) 2011 Elsevier B.V. All rights reserved.