Large area (600 x 720 mm) depositions of hydrogenated microcrystalline silicon (mu c-Si:H) have been achieved at high deposition rates using a scalable, multi-tile electrode topology. Depositions have shown local results of mu c-Si:H deposited with SiH(4) concentrations of up to 20% and at rates of up to 15 angstrom/s. Of particular interest for this electrode topology is the material across the inter-tile gap. Here we present measurements of the deposition uniformity across the inter-tile gap as well as the material characteristics of the layers. The behaviour of the crystalline fraction, chi(c) is observed using Raman spectroscopy, x-ray diffractometry, and dark/light conductivity measurements. A qualitative interpretation of these results is presented, relating them to depletion of SiH(4) in the plasma. (C) 2011 Elsevier B.V. All rights reserved.