Coevaporated Cu(In,Ga)Se(2) (CIGS) film growth using a if-plasma cracked Se-radical beam (R-Se) source leads to a significant reduction in the amount of raw Se source material wasted during growth and exhibits unique film properties such as highly dense, smooth surfaces and large grain size. R-Se grown CIGS solar cells also show concomitant unique properties different from conventional evaporative Se (E-Se) source grown CIGS cells. In the present work, the impact of modified surfaces, interfaces, and bulk crystal properties of R-Se grown CIGS films on the solar cell performance was studied. When a R-Se source was used, Na diffusion into CIGS layers was enhanced while a remarkable diffusion of elemental Ga and Se into Mo back contact layers was observed. Improvements in the bulk crystal quality as manifested by large grain size and increased Na concentration with the use of a R-Se source is expected to be effective to improve photovoltaic performance. Using a R-Se source for the growth of CIGS absorber layers at a relatively low growth temperature, we have successfully demonstrated a monolithically integrated submodule efficiency of 15.0% (17 cells, aperture area 01 76.5 cm(2)) on 0.25-mm thick soda-lime glass substrates. (C) 2010 Elsevier B.V. All rights reserved.