The commonly used CdS/i-ZnO buffer system in Cu(In,Ga)Se(2) (CIGS) thin-film solar cells was substituted by ZnS/(Zn,Mg)O. ZnS has a higher transmission in the short wavelength range due to the higher bandgap energy E(g)=3.7 eV compared to CdS with E(g)=2.4 eV. Unfortunately, in our experiments the resulting gain in short-circuit current density j(SC) as the result of reduced absorption losses in the blue wavelength region is mostly accompanied by a decrease in open-circuit voltage V(OC) of the devices with ZnS buffer. This contribution discusses possible explanations for the systematically lower open-circuit voltages of the devices with a ZnS buffer layer. The carrier collection properties of the devices with a ZnS buffer were investigated by electron beam induced current measurements in the junction configuration. The maximum of the collection probability for ZnS cells is located in the CIGS bulk and not near the buffer/CIGS interface like for solar cells with CdS buffer. Additionally, we observed a larger space charge width compared to devices with a CdS buffer. This finding concurs with the considerably lower capacitance values and also lower charge densities in ZnS-buffered devices, as determined by capacitance voltage measurements. Based on these findings, the main reason for the lower open-circuit voltages of our ZnS devices is that the charge densities are lower than for the CdS/i-ZnO cells. (C) 2010 Elsevier B.V. All rights reserved.