High quality epitaxial Bi3.15Nd0.85Ti3O12 (BNT) thin films with thicknesses from 30 to 80 nm have been integrated on SiO2/Si substrates. MgO templates deposited by ion-beam-assisted deposition and SrRuO3 (SRO) buffer layers processed by pulsed laser deposition have been used to initiate the epitaxial growth of BNT films on the amorphous SiO2/Si substrates. The structural and ferroelectric properties were investigated. Microstructural studies by X-ray diffraction and transmission electron microscopy revealed high quality crystalline with an epitaxial relationship of (001)(BNT)parallel to(001)(SRO)parallel to(001)(MgO) and [100](BNT)parallel to[110](SRO)parallel to[110](MgO). A ferroelectric hysteresis loop with a remanent polarization of 3.1 mu C/cm(2) has been observed for a 30 nm thick film. The polarization exhibits a fatigue-free characteristic up to 1.44x 10(10) switching cycles. (C) 2011 Elsevier B.V. All rights reserved.